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2D-material-based chemical resistive RAM cells toggle at 1 V with 10 ns switching and >10¹² retention, supporting neuromorphic in-memory computing .#2DResistiveRAM #Neuromorph


2D-material-based chemical resistive RAM cells toggle at 1 V with 10 ns switching and >10¹² retention, supporting neuromorphic in-memory computing .#2DResistiveRAM #Neuromorph


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